| PART |
Description |
Maker |
| DWBW2F4S02 DWBW2F4S12 DWBW2FTS32 DWBW3FTS32 DWBW3F |
Bandsplitters 200 GHz Channel Spacing
|
JDS Uniphase Corporation
|
| AD8353 AD8353ACP-REEL7 AD8353-EVAL AD8353ACP-R2 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
AD[Analog Devices]
|
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| AGR26045EF |
45 W, 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR26125E AGR26125EF AGR26125EU |
125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| ADG904BRUZ |
Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T 4-CHANNEL, SGL ENDED MULTIPLEXER, PDSO20
|
Analog Devices, Inc.
|
| SUP60N10-16L |
N-Channel 100-V (D-S) 175C MOSFET
From old datasheet system
N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
N-Channel MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| BSP372 Q67000-S300 BSP372E-6327 BSP372E6327 |
1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated SIPMOS小信号晶体管（N通道增强模式逻辑层次额定雪崩
1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFRC9130S.5B |
10 AMP /100 Volts 300 mRadiation Tolerant P-Channel MOSFET 10 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| MR208-2 |
RF/LO: 4 to 6 GHz IF: DC to 100 MHz
|
API Technologies Corp
|
| PE6825 |
100 Watts WR-102 RF Load Up To 11 GHz
|
Pasternack Enterprises, Inc.
|
